Wykaz publikacji wybranego autora

Piotr Wiśniowski, dr hab. inż., prof. AGH

profesor nadzwyczajny

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki


  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne


  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika


[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-7995-7416 orcid iD

ResearcherID: E-3288-2010

Scopus: 24462701800

PBN: 5e70922c878c28a047391227

OPI Nauka Polska

System Informacyjny AGH (SkOs)




1
  • 1/f magnetic noise in MgO/CoFeB based sensors with voltage controlled perpendicular anisotropy
2
  • Analiza strukturalna wielowarstw na przykładzie magnetycznych złącz tunelowych
3
  • Antiferromagnetic coupling in CoFeB/Ru/CoFeB prepared by sputtering and ion beam deposition
4
  • Bias voltage dependence of sensitivity in tunneling magnetoresistance sensors with voltage controlled magnetic anisotropy
5
  • Bottom type MTJ – magnetization switching properties and domain structure
6
  • Broadband microwave detector based on GMR-SV with varying interlayer exchange coupling
7
  • Cienkowarstwowe magnetyczne złącza tunelowe i ich zastosowania
8
  • Co nowego w spintronice?
9
  • Crystallization of CoFeB electrodes in magnetic tunnel junctions
10
  • Current induced magnetization switching in magnetic tunnel junctions with perpendicular magnetic anisotropy
11
  • Displacement detection and measurements for human activity recognition using magnetic field sensor
12
  • Dynamic properties of MgO/CoFeB based sensors with perpendicular anisotropy
13
  • Effect of bias voltage on field detection of CoFeB/MgO/CoFeB sensors with low and high sensitivity
14
  • Effect of bias voltage on sensitivity-bandwidth product of single and series connected tunneling magnetoresistance sensors
15
  • Effect of electrode composition on low frequency magnetic noise in MgO/CoFeB sensors with perpendicular anisotropy
16
  • Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy
17
  • Effect of perpendicular anisotropy strength on low frequency magnetic noise and field detection in MgO/CoFeB based sensors
18
  • Electrode band structure effects in thin MgO magnetic tunnel junctions
19
  • Elektronika spinowa
20
21
  • Exchange biased magnetic tunnel junctions with thin CoFeB electrodes for in-plane and out-of-plane magnetic field sensing
22
  • High frequency current sensors based on MTJ with perpendicular anisotropy
23
  • High sensitivity tunneling magnetoresistance devices for biosensors
24
  • In situ x-ray diffraction study of $CoFeB/MgO/CoFeB$ based P-SV and EB-SV magnetic tunnel junctions
25
  • Influence of annealing on crystallization and magnetic properties of spin valve ${MgO}$ based tunnel magnetoresistance junctions