Wykaz publikacji wybranego autora

Piotr Wiśniowski, dr hab. inż., prof. AGH

profesor nadzwyczajny

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki


  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne


  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika


[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-7995-7416 orcid iD

ResearcherID: E-3288-2010

Scopus: 24462701800

PBN: 5e70922c878c28a047391227

OPI Nauka Polska

System Informacyjny AGH (SkOs)




1
  • 1/f magnetic noise dependence on free layer thickness in hysteresis free MgO magnetic tunnel junctions
2
  • Bias voltage dependence of sensing characteristics in tunneling magnetoresistance sensors
3
4
  • Dependence of sensitivity, derivative of transfer curve and current on bias voltage magnitude and polarity in tunneling magnetoresistance sensors
5
6
  • Effect of buffer layer texture on the crystallization of $CoFeB$ and on the tunnel magnetoresistance in MgO based magnetic tunnel junctions
7
  • Effect of $CoFeB$ electrode compositions on low frequency magnetic noise in tunneling magnetoresistance sensors
8
9
  • Electrode band structure effects in thin MgO magnetic tunnel junctions
10
  • Electroforming, magnetic and resistive switching in $MgO-based$ tunnel junctions
11
  • Evidence of spin-polarized direct elastic tunneling and onset of superparamagnetism in MgO magnetic tunnel junctions
12
  • Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities
13
  • Field noise in tunneling magnetoresistance sensors with variable sensitivity
14
  • Giant intrinsic thermomagnetic effects in thin MgO magnetic tunnel junctions
15
  • High immunity wafer-level measurement of MHz current
16
17
18
  • Magnetic field sensor based on magnetic tunnel junction with voltage-tunable magnetic anisotropy
19
  • Magnetic field sensor with voltage-tunable sensing properties
20
  • Magnetic noise prediction and evaluation in tunneling magnetoresistance sensors
21
  • Magnetic tunnel junctions based on out-of-plane anisotropy free and in-plane pinned layer structures for magnetic field sensors
22
  • Method of step detection and counting based on measurements of magnetic field variations
23
  • Observation of spin-dependent quantum well resonant tunneling in textured CoFeB layers
24
  • Rectification of radio-frequency current in a giant-magnetoresistance spin valve
25
  • Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors