Wykaz publikacji wybranego autora

Wiesław Powroźnik, mgr

specjalista

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki

  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne

  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika

[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika

Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0003-2235-8209 orcid iD

ResearcherID: brak

Scopus: 6603031317

PBN: 5e7094cb878c28a0473c3ee3

System Informacyjny AGH (SkOs)

1
  • 128 [Hundred twenty eight]-channel silicon strip detector implemented in a powder diffractometer
2
  • 128-channel silicon strip detector installed at a powder diffractometer
3
  • Application properties of ZnO and AZO thin films obtained by the ALD method
4
5
  • Current induced magnetization field free switching in exchange biased Pt(W)/Co/NiO heterostructures
6
  • Current induced magnetization field free switching in exchange biased Pt(W)/Co/NiO heterostructures
7
  • Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque
8
  • Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque
9
  • Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque
10
11
  • Field-free spin-orbit torque-induced magnetization switching and spin hall magnetoresistance in exchange-biased W/Co/NiO system
12
  • In situ x-ray diffraction study of $CoFeB/MgO/CoFeB$ based P-SV and EB-SV magnetic tunnel junctions
13
  • Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy
14
  • Influence of Ta buffer layer thickness on magnetic properties and microstructure parameters of CoFeB and MgO layers
15
  • Low resistance magnetic tunnel junctions with MgO wedge barrier
16
  • Low resistance magnetic tunnel junctions with MgO wedge barrier
17
  • Magnetic parameters of diluted magnetic semiconductors $CdCr_{2-2x}In_{2x}Se_{4}$
18
19
  • Magnetic semiconductor thin films of $CdCr_{2-2x}In_{2x}Se_{4}$ – photoconductivity
20
21
  • Optimization of spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers
22
  • Role of surface crystalline on magnetoimpedance in $Co$-based amorphous ribbons
23
24
  • Silicon strip detector applied to X-ray diffraction of thin films and superlattices
25
  • Spin-orbit torque induced magnetization dynamics and switching in a CoFeB/Ta/CoFeB system with mixed magnetic anisotropy