Wykaz publikacji wybranego autora

Elżbieta Strzałka, dr inż.

poprzednio: Wach

adiunkt

Wydział Fizyki i Informatyki Stosowanej
WFiIS-kis, Katedra Informatyki Stosowanej i Fizyki Komputerowej

  • 2018

    [dyscyplina 1] dziedzina nauk ścisłych i przyrodniczych / nauki fizyczne

Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0001-8983-9109 orcid iD

ResearcherID: brak

Scopus: 55813359600

PBN: 5e709298878c28a047398b0a

OPI Nauka Polska

System Informacyjny AGH (SkOs)

Liczba pozycji spełniających powyższe kryteria selekcji: 14, z ogólnej liczby 14 publikacji Autora

1
  • Charge density mapping of strongly-correlated few-electron two-dimensional quantum dots by the scanning probe technique
2
  • Charge transport through a semiconductor quantum dot-ring nanostructure
3
  • Confined states in quantum dots defined within finite flakes of bilayer graphene: coupling to the edge, ionization threshold, and valley degeneracy
4
  • Extraction of the charge density confined in quantum dots from the maps of chemical potentials in scanning gate microscopy measurements
5
  • Imaging of liquid – solid transition in two-dimensional quantum dots by scanning probe microscopy
6
  • Imaging quantum-dot-confined electron density in transition to fractional quantum Hall regime
7
8
  • Mapping of the electron density in liquid – solid transition in two-dimensional quantum dots by scanning gate microscopy
9
  • Numerical simulations of imaging of the charge density confined in the planar quantum dots in transition to fractional quantum Hall regime
10
  • Numerical simulations of the Coulomb blockade microscopy expeiments: probing the local properties of the planar quantum dots using the scanning gate technique
11
12
  • Read-out of confined charge density by charge probe technique in the fractional quantum Hall regime
13
  • Simulation of the Coulomb blockade microscopy of quantum dots
14
  • Simulations of imaging of the electron density in the planar quantum dots in transition to fractional quantum Hall regime